Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

摘要

The occurrence of inhomogeneous spin-density distribution in multilayeredferromagnetic diluted magnetic semiconductor nanostructures leads to strongdependence of the spin-polarized transport properties on these systems. Thespin-dependent mobility, conductivity and resistivity in(Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as afunction of temperature, scaled by the average magnetization of the dilutedmagnetic semiconductor layers. An increase of the resistivity near thetransition temperature is obtained. We observed that the spin-polarizedtransport properties changes strongly among the three materials.